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Datasheet XL1225 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1XL1225SCRs

TM HPM HAOPIN MICROELECTRONICS CO.,LTD. XL1225 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrate
HAOPIN
HAOPIN
data
2XL1225SCR

SCR XL 1225 / ML 1225 0.6A 300V (ML1225) / 400V (XL1225), IGT < 200 µA DESCRIPTION The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost and high volume applications. ABSOLUTE MAXIMUM RATING Parameter Part No. Symbol Min. Max R
ETC
ETC
data
3XL1225SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS ML1225 XL1225 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices. They
DC COMPONENTS
DC COMPONENTS
rectifier
4XL1225Thyristor

XL1225 Rev.E Mar.-2016 描述 / Descriptions TO-92 塑封封装单向可控硅。Thyristor in a TO-92 Plastic Package. 特征 / Features 低成本,高容量。 Intended for low cost high volume applications. 用途 / Applications 应用于高压控制电路。 Applied to high Voltage control cir
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
thyristor
5XL1225MEDIUM POWER LOW VOLTAGE TRANSISTOR

UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SCR  ORDERING INFORMATION Ordering Nu
Unisonic Technologies
Unisonic Technologies
transistor


XL1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1XL100020.0-40.0 GHz GaAs MMIC Low Noise Amplifier

20.0-40.0 GHz GaAs MMIC Low Noise Amplifier April 2005 - Rev 01-Apr-05 L1000 Chip Device Layout Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure
Mimix Broadband
Mimix Broadband
datasheet XL1000 pdf
2XL1000-BDLow Noise Amplifier

XL1000-BD Low Noise Amplifier 20.0-40.0 GHz Features  Self Bias Architecture  Small Size  3.0 or 5.0 V Operation  20.0 dB Small Signal Gain  2.0 dB Noise Figure  +9.0 dBm P1dB Compression Point  100% On-Wafer RF, DC and Noise Figure Testing  100% Visual Inspection to MIL-STD-
MA-COM
MA-COM
datasheet XL1000-BD pdf
3XL100117.0-35.0 GHz GaAs MMIC Low Noise Amplifier

17.0-35.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1001 Chip Device Layout Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visua
Mimix Broadband
Mimix Broadband
datasheet XL1001 pdf
4XL100220.0-36.0 GHz GaAs MMIC Low Noise Amplifier

20.0-36.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1002 Chip Device Layout Features Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visua
Mimix Broadband
Mimix Broadband
datasheet XL1002 pdf
5XL1002-BDLow Noise Amplifier

XL1002-BD Low Noise Amplifier 20.0-36.0 GHz Features  Balanced Design  Excellent Input/Output Match  Self-biased Architecture  23.0 dB Small Signal Gain  2.6 dB Noise Figure  100% On-Wafer RF, DC and Noise Figure Testing  100% Visual Inspection to MIL-STD-883 Method 2010  RoH
MA-COM
MA-COM
datasheet XL1002-BD pdf
6XL100324.0-40.0 GHz GaAs MMIC Low Noise Amplifier

24.0-40.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1003 Chip Device Layout Features Balanced Output Stage Excellent Input/Output Match Self-biased Architecture 24.0 dB Small Signal Gain 1.7 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% V
Mimix Broadband
Mimix Broadband
datasheet XL1003 pdf
7XL100435.0-45.0 GHz GaAs MMIC Low Noise Amplifier

35.0-45.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1004 Chip Device Layout Features Balanced Design Excellent Input/Output Match Self-biased Architecture 17.0 dB Small Signal Gain 1.8 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual
Mimix Broadband
Mimix Broadband
datasheet XL1004 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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