|
|
Datasheet WTC2306 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | WTC2306 | Enhancement Mode Power MOSFET WTC2306
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
2
SOURCE
Features:
* Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Packag |
Weitron Technology |
|
2 | WTC2306 | N-Channel Enhancement Mode Power MOSFET WTC2306
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
2
SOURCE
Features:
* Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Packag |
Weitron Technology |
|
1 | WTC2306A | Enhancement Mode Power MOSFET WTC2306A
N-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
Features:
SOURCE
2
3 1 2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <30mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 |
Weitron Technology |
Esta página es del resultado de búsqueda del WTC2306. Si pulsa el resultado de búsqueda de WTC2306 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |