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Datasheet WFD4N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | WFD4N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFU4N60/WFD4N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V |
 Wisdom technologies |
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| 2 | WFD4N60 | Power MOSFET ( Transistor ) WFD4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSF |
 Winsemi |
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| 1 | WFD4N60B | Power MOSFET ( Transistor ) WFD4N60B
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOS |
Winsemi |
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