Datasheet UPD444016-Y Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	UPD444016-Y	4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The	NEC

UPD44401 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
UPD444016L	4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT DATA SHEET MOS INTEGRATED CIRCUIT µPD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD444016L is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444016L is packaged i	NEC
UPD444012A-X	4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. The µPD444012A-X has two chip enable p	NEC
UPD444016	4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT DATA SHEET MOS INTEGRATED CIRCUIT µPD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444016 is packaged in 4	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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