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Datasheet TVR4N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | TVR4N | TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery) TVR4J,TVR4N
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
High Speed Rectifier Applications (fast recovery)
Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.
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Toshiba Semiconductor |
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1 | TVR4N | (TVR4J / TVR4N) FAST RECOVERY RECTIFIER
BL GALAXY ELECTRICAL
FAST RECOVERY RECT IFIER
FEATURES
Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V-0
TVR4J--- |
Galaxy Semi-Conductor |
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Número de pieza | Descripción | Fabricantes | |
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