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Datasheet TSM4410 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TSM4410 | N-Channel Enhancement Mode MOSFET TSM4410
Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain
Preliminary
N-Channel Enhancement Mode MOSFET
VDS = 25V ID = 10A RDS (on), Vgs @ 10V, Ids @ 10A = 13.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 8A = 20mΩ
Features
Advanced trench process technology Hig |
 Taiwan Semiconductor Company |
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| 1 | TSM4410D | 25V Dual N-Channel MOSFET TSM4410D
25V Dual N-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
25 15 @ VGS = 10V 21 @ VGS = 4.5V
SOP-8
Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6, 7, 8. Drain
ID (A)
10 8
Features
● ● Advance Trench Process Technology High Density Cell Desi |
Taiwan Semiconductor Company |
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