Datasheet TSM3460 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSM3460	20V N-Channel MOSFET w/ESD Protected TSM3460 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20V N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.) Features Advanced trench process technology High density cel	Taiwan Semiconductor Company

TSM3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSM3404	30V N-Channel MOSFET TSM3404 30V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 30 @ VGS = 10V 43 @ VGS = 4.5V ID (A) 5.8 5.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low	Taiwan Semiconductor Company
TSM3916	(TSM3914 / TSM3915 Series) Integrated Bar Graph Displays	Three-Five
TSM35N10CP	100V N-Channel Power MOSFET TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)	Taiwan Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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