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Datasheet TSM2N7002 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | TSM2N7002 | 60V N-Channel Enhancement Mode MOSFET TSM2N7002
60V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω
Features
Advanced trench process technology High density cell design for low on-resistance |
 Taiwan Semiconductor Company |
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| 3 | TSM2N7002E | 50V N-Channel Enhancement Mode MOSFET TSM2N7002E
50V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω
Features
Advanced trench process technology High density cell design for ultra low on-resistance |
Taiwan Semiconductor Company |
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| 2 | TSM2N7002K | 60V N-Channel MOSFET TSM2N7002K
60V N-Channel MOSFET
SOT-23 SOT-323
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
60 2 @ VGS = 10V 4 @ VGS = 4.5V
ID (mA)
300 200
Features
● ● ● ● Low On-Resistance ESD Protected 2KV High Speed Switching Low Voltage Drive
Bl |
Taiwan Semiconductor Company |
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| 1 | TSM2N7002KD | 60V N-Channel MOSFET TSM2N7002KD
60V N-Channel MOSFET
SOT-363
Pin Definition: 1. Source 2 6. Drain 2 2. Gate 2 5. Gate 1 3. Drain 1 4. Source 1
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
60 2 @ VGS = 10V 4 @ VGS = 4.5V
ID (mA)
300 200
Features
● ● ● ● Low On-Resistance ESD Protection High Speed Switching Low Voltage |
 Taiwan Semiconductor |
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