|
|
Datasheet TSM2307 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TSM2307 | 30V P-Channel MOSFET 30V P-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
TSM2307
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
-30 80 @ VGS = -10V 140 @ VGS = -4.5V
ID (A)
-3 -2
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Blo |
 Taiwan Semiconductor Company |
 |
| 1 | TSM2307CX | 30V P-Channel MOSFET TSM2307CX
30V P-Channel MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = -10V VGS = -4.5V
-30 95 140
Qg 10
Unit V mΩ
nC
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On- |
 Taiwan Semiconductor |
|
| Esta página es del resultado de búsqueda del TSM2307. Si pulsa el resultado de búsqueda de TSM2307 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |