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Datasheet TSM2301B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TSM2301B   20V P-Channel MOSFET

TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain ID (A) -2.8 -2.0 -2.0 Features ● ● Advance Trench Process Technology High Density Cell Design for
 Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet TSM2301B pdf

TSM23 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TSM2311

20V P-Channel Enhancement Mode MOSFET

TSM2311 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ Features Advanced trench process technology High density cell de
 Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet pdf - Taiwan Semiconductor Company
TSM2310

20V N-Channel MOSFET

20V N-Channel MOSFET SOT-23 TSM2310 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V ID (A) 4 3.2 2.0 Features ● ● Advance Trench Process Technology High Density Cell
Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet pdf - Taiwan Semiconductor Company
TSM2301

20V P-Channel Enhancement Mode MOSFET

TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Features Advanced trench process technology High density cell de
 Taiwan Semiconductor Company
Taiwan Semiconductor Company		 datasheet pdf - Taiwan Semiconductor Company


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Número de pieza Descripción Fabricantes PDF
SPS122

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