|
|
Datasheet TSM10P06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TSM10P06 | 60V P-Channel MOSFET TSM10P06
60V P-Channel MOSFET
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
-60 220 @ VGS = -4.5V -2
RDSON (mΩ)
170 @ VGS = -10V
ID (A)
-5
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
|
 Taiwan Semiconductor |
 |
| 1 | TSM10P06CP | 60V P-Channel MOSFET TSM10P06
60V P-Channel MOSFET
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
-60 220 @ VGS = -4.5V -2
RDSON (mΩ)
170 @ VGS = -10V
ID (A)
-5
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
|
Taiwan Semiconductor |
|
| Esta página es del resultado de búsqueda del TSM10P06. Si pulsa el resultado de búsqueda de TSM10P06 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |