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Toshiba TPCF8B01
Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Datasheet TPCF8B01 Equivalent ( PDF )

P/N Descripción Fabr. PDF
TPCF8B01 Multi-Chip Device Silicon P Channel MOS Type

TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) , Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-model: Vth = 0.5 to 1.2 V(VDS = 10 V, ID = 200
Toshiba Semiconductor Toshiba Semiconductor TPCF8B01 datasheet



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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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