Toshiba TPC8210

Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Datasheet TPC8210 Equivalent ( PDF )

P/N	Descripción	Fabr.	PDF
TPC8210	Notebook PC Applications TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS III) TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications - Low drain source ON resistance: RDS (ON) = 11 mΩ (typ.) - High forward transfer admittance: \|Yfs\| = 13 S (typ.) - Low leakage current: IDSS = 10 A (max) (VDS = 30 V) - Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V

TPC8 Datasheet ( Hoja de datos ) - Resultados que coinciden

P/N	Descripción	Fabr.	PDF
TPC8001	Silicon N Channel MOS Type (MOSVI)
TPC8002	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
TPC8003	Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8004	Silicon N Channel MOS Type (MOSVI)
TPC8005-H	Silicon N Channel MOS Type (High Speed U−MOS)
TP2412	Low Noise CMOS RRIO Op Amps
TPC112S1	Low-Power, High-Performance DAC

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P/N	Descripción	Fabr.	PDF
2N3904	NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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