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Datasheet TPC8124 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| TPC8124 | Field Effect Transistor Silicon P Channel MOS Type TPC8124
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8124
Lithium Ion Battery Applications Power Management Switch Applications
Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.1 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 0.5mA) Unit: mm
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TPC8 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| TPC8001 | Silicon N Channel MOS Type (MOSVI)
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| TPC8002 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
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| TPC8003 | Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
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| TPC8004 | Silicon N Channel MOS Type (MOSVI)
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| TPC8005-H | Silicon N Channel MOS Type (High Speed U−MOS)
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| TP2412 | Low Noise CMOS RRIO Op Amps
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| TPC112S1 | Low-Power, High-Performance DAC
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| P/N | Descripción | Fabr. | |
| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
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