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Motorola TP3022B
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
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Datasheet TP3022B Equivalent ( PDF ) - Transistor

P/N Descripción Fabr. PDF
TP3022B NPN SILICON UHF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3022B, D UHF Power Transistor The TP3022B is designed for common emitter operation in the 900 MH- mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output, driver transistor with state of the art ruggedness and reliability. Specified 26 Volts, 960 MH- Character
Motorola  Inc Motorola  Inc TP3022B datasheet
NPN SILICON UHF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3022B, D UHF Power Transistor The TP3022B is designed for common emitter operation in the 900 MH- mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output, driver transistor with state of the art ruggedness and reliability. Specified 26 Volts, 960 MH- Character
Motorola  Inc Motorola  Inc TP3022B datasheet
NPN SILICON UHF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP3022B, D UHF Power Transistor The TP3022B is designed for common emitter operation in the 900 MH- mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output, driver transistor with state of the art ruggedness and reliability. Specified 26 Volts, 960 MH- Character
Motorola  Inc Motorola  Inc TP3022B datasheet



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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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