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Datasheet TK26 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | TK26 | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
2 | TK2614K | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
3 | TK2614M | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
4 | TK2616K | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
5 | TK2616M | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
6 | TK2618K | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
7 | TK2618M | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
8 | TK2620K | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
9 | TK2620M | Phase Control Thyristor TK26
TK26
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS4254-4.0 DS4254-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 180A 4000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC | Dynex Semiconductor | thyristor |
TK2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | TK2019 | STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on
TK2019 STEREO 20W (4 Ω ) CLASS-T™ DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY
Preliminary Information Revision 2.1 – October 2003
GENERAL DESCRIPTION
The TK2019 (TC2001/TPS10 Tripath amplifier | | |
2 | TK2050 | STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on
TK2050 STEREO 50W (8 Ω ) CLASS-T™ DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY
Technical Information Revision 1.1 – October 2002
GENERAL DESCRIPTION The TK2050 (TC2000/TP2050 c Tripath amplifier | | |
3 | TK2051 | STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on
TK2051 STEREO 50W (8 Ω ) CLASS-T™ DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY
Technical Information Revision 1.1 – August 2002
GENERAL DESCRIPTION The TK2051 (TC2000/TP2051 ch Tripath Technology amplifier | | |
4 | TK2070 | STEREO 70W (4Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on
TK2070 STEREO 70W (4 Ω ) CLASS-T™ DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY
Preliminary Information Revision 2.1 – October 2003
GENERAL DESCRIPTION
The TK2070 (TC2001/TPS10 Tripath Technology amplifier | | |
5 | TK20A20D | Switching Voltage Regulators TK20A20D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK20A20D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.07 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID Toshiba regulator | | |
6 | TK20A25D | Switching Voltage Regulators TK20A25D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK20A25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, I Toshiba regulator | | |
7 | TK20A60U | Field Effect Transistor TK20A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK20A60U
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 60 Toshiba transistor | | |
8 | TK20A60W | MOSFET, Transistor TK20A60W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK20A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3. Toshiba Semiconductor mosfet | | |
9 | TK20A60W5 | MOSFET, Transistor TK20A60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK20A60W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to co Toshiba Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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