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Datasheet TK13A50D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TK13A50D | Field Effect Transistor TK13A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A50D
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A
• • • •
Low drain-source ON resistance: RDS (O |
 Toshiba |
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| 1 | TK13A50DA | Field Effect Transistor TK13A50DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A50DA
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) |
 Toshiba Semiconductor |
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