| P/N |
Descripción |
Fabr. |
PDF |
|
TIP36A |
COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP35A, D
Complementary Silicon High-Power Transistors
. . . for general purpose power amplifier and switching applications. 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz
|
 |
 |
Complementary Silicon High-Power Transistors
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
Complementary Silicon High-Power Transistors
Designed for general purpose power amplifier and switching applications.
Features
25 A Collector Current Low Leakage Current
ICEO = 1.0 mA @ 30 and 60 V
Excellent DC Gain
hFE = 40 Typ @ 15 A
High Current Gain Bandwidth Product
hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz
These are Pb Fre
|
 |
|
POWER TRANSISTORS(25A/40-100V/125W)
A
A
A
|
 |
|
PNP SILICON POWER TRANSISTORS
TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS
Copyright 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997
q
Designed for Complementary Use with the TIP35 Series 125 W at 25°C Case Temperature
B
SOT-93 PACKAGE (TOP VIEW) 1
q q q q
25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available
E
3 Pin 2 is in electrical con
|
 |
|
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-3PN package ·Complement to type TIP35, 35A, 35B, 35C ·DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING
PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
TIP36, 36A, 36B, 36C
·
Fig.1 si
|
 |
|
.gif "KEC(Korea Electronics)"){kind=small}
