Datasheet TIP35C Equivalent ( PDF ) - Transistor

TIP35C TIP36C Complementary power transistors Features - Low collector-emitter saturation voltage - Complementary NPN - PNP transistors Applications - General purpose - Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-24

TIP35C AUDIO POWER AMPLIFIER DC TO DC CONVERTER NPN PLANAR SILICON TRANSISTOR SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to TIP36C ABSOLUTE MAXIMUM RATING (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A, D Complementary Silicon High-Power Transistors . . . for general purpose power amplifier and switching applications. 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general purpose power amplifier and switching applications. Features 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz These are Pb Fre