| P/N |
Descripción |
Fabr. |
PDF |
|
TIP147F |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP145F, 146F, 147F
TIP145F, 146F, 147F
Monolithic Construction With Built In BaseEmitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140F, 141F, 142F
1
TO-3PF 2.Collector 3.Emitter
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Emitter Voltage : TI
|
 |
 |
PNP (HIGH DC CURRENT GAIN)
|
 |
 |
SILICON PLANAR DARLINGTON POWER TRANSISTORS
Transys
Electronics
LIMITED
SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP
TO- 3P Fully Isolated Plastic Package
B C E
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (repetitive) Base Current Total P
|
 |
 |
Trans Darlington PNP 100V 10A 3-Pin(3+Tab) TO-3PF
|
 |
 |