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Descripción |
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PDF |
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TIP146T |
Monolithic Construction
TIP145T, 146T, 147T
TIP145T, 146T, 147T
◎ SEMIHOW REV.A0,Oct 2007
TIP145T, 146T, 147T
TIP145T, 146T, 147T
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP140, 141, 142
Absolute Maximum Ratings
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POWER TRANSISTORS(10A/60-100V/80W)
A
A
A
A
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Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP145T, 146T, 147T
TIP145T, 146T, 147T
Monolithic Construction With Built In BaseEmitter Shunt Resistors
High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) Industrial Use Complement to TIP140T, 141T, 142T
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-B
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Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220AB
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Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220AB
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