Datasheet TIP141 Equivalent ( PDF ) - Transistor

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPN TIP145, 146, 147 PNP TO- 3PN Non Isolated Plastic Package Designed for General Purpose Amplifier and Low Frequency Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter

TIP140, 141, 142 HIGH DC CURRENT GAIN NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Complementary to TIP145, 146, 147 SC-65 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :TIP140 TIP141 TIP142 Collector-EmitterVoltage :TIP140 TIP141 TIP142 Emitter-Base voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Tc=25°C) Junction

TIP140, 141, 142 TIP140, 141, 142 Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145, 146, 147 1 TO-3P NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP140 : TIP141 : TIP142 Value

® TIP140, 141, 142 TIP145, 146, 147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP140, TIP141 and TIP142

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP140, D Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V Collector Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) TIP141, TIP146