| P/N |
Descripción |
Fabr. |
PDF |
|
TIP140T |
POWER TRANSISTORS(10A/60-100V/80W)
A
A
A
A
|
 |
 |
Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP140T
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ·Complement to Type TIP145T
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAM
|
 |
|
Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-220AB
|
 |
|
NPN Epitaxial Silicon Darlington Transistor
TIP140T , TIP141T , TIP142T NPN Epitaxial Silicon Darlington Transistor
TIP140T , TIP141T , TIP142T NPN Epitaxial Silicon Darlington Transistor
Features
Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T, 146T, 147T
Equivalent Circuit C
July 2009
B
1 TO-220 1.Base 2.Collec
|
 |
|
PNP Epitaxial Silicon Darlington Transistor
TIP140T, 141T, 142T
TIP140T, 141T, 142T
◎ SEMIHOW REV.A0,Oct 2007
TIP140T, 141T, 142T
TIP140T, 141T, 142T
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145, 146, 147
Absolute Maximum Ratings T
|
 |
|
.gif "KEC(Korea Electronics)"){kind=small}
