Datasheet TIP122F Equivalent ( PDF ) - Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TO-220F TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATURES Medium Power Complementary Silicon Transistors 1.BASE 2.COLLECTOR 3.EMITTER 123 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC PC RθJA RθJC TJ Tstg

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ IC= 5A ·Complement to Type TIP127FP APPLICATIONS ·Designed for general purpose amplifier and low speed switching ap

TIP122FP TIP127FP Complementary power Darlington transistors Features - Low collector-emitter saturation voltage - Complementary NPN - PNP transistors - TO-220FP isolated package UL compliant Application - General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transisto