Datasheet TIP121 Equivalent ( PDF ) - Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES Medium Power Complementary Silicon Transistors TO-220-3L 1.BASE 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC PC RθJA RθJc TJ Tstg Collector-B

Darlington Power Transistors (NPN) TIP120, 121, 122 Darlington Power Transistors (NPN) Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Desc

PNP, NPN Silicon Power Transistor P b Lead(Pb)-Free FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TIP120 Series 1 23 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP120 TIP125 VCBO Collector-Base Voltage 60 VCEO Collector-Emit

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE