Datasheet TIP106 Equivalent ( PDF ) - Transistor

Darlington Power Transistors (PNP) TIP105, 106, 107 Darlington Power Transistors (PNP) Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Desc

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE

TIP105, TIP106, TIP107 PNP Epitaxial Silicon Darlington Transistor TIP105, TIP106, TIP107 PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP100, 101, 102 Equi

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100, D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general purpose amplifier and low speed switching applications. High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 30 mAdc VCEO(sus) = 60 Vdc (Min) TIP100, TIP105 VCEO(sus) = 80 Vdc (Min) TIP101, TIP106 VC

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general purpose amplifier and low speed switching applications. Features High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 30 mAdc VCEO(sus) = 60 Vdc (Min) TIP100, TIP105 = 80 Vdc (Min) TIP101, TIP106 = 100 Vdc (Min) TIP10