Datasheet TIP102 Equivalent ( PDF ) - Transistor

TIP100, 101, 102 TIP100, 101, 102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100, 101, 102 TIP100, 101, 102 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP105, 106, 107 Absolute Maximum Ratings Ta=25℃ unless

Darlington Power Transistors (NPN) TIP100, 101, 102 Darlington Power Transistors (NPN) Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Desc

MCC TM Micro Commercial Components  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Lead Free Finish, RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc Low Collector-Emitter Saturation Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors TO-2

TIP102 ® TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s AUDIO POWER AMPLIFIER s GENERAL POWER SWITCHING s DC-AC CONVERTER s EASY DRIVER FOR LOW VOLTAGE DC MOTOR DESCRIPTION The TIP102 is a silicon Epita

TIP102 NPN Epitaxial Silicon Darlington Transistor December 2014 TIP102 NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP107 Equivalent Circu