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Datasheet TGA2216-SM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TGA2216-SM | 10W GaN Power Amplifier Applications
Commercial and military radar Communications Electronic Warfare
TGA2216-SM
0.1 – 3.0GHz 10W GaN Power Amplifier
Product Features
Frequency Range: 0.1 – 3.0GHz PSAT: >40dBm at PIN = 27dBm P1dB: >35dBm
PAE: 50% @ midband
Large Signal Gain: >13dB S |  TriQuint Semiconductor | amplifier |
TGA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TGA1045 | Ku Band Power Amplifier Advance Product Information
Ku Band Power Amplifier TGA1045-EPU
Key Features and Performance
• • • • • HFET Technology 12.5 -15.5 GHz Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias
Primary Applications
• • • Ku band Satellite Ground Terminal VSAT Point-to-Point TriQuint Semiconductor amplifier | | |
| 2 | TGA1045-EPU | Ku Band Power Amplifier Advance Product Information
Ku Band Power Amplifier TGA1045-EPU
Key Features and Performance
• • • • • HFET Technology 12.5 -15.5 GHz Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias
Primary Applications
• • • Ku band Satellite Ground Terminal VSAT Point-to-Point TriQuint Semiconductor amplifier | | |
| 3 | TGA1055 | Ka Band 2 Watt Power Amplifier Advance Product Information
Ka Band 2 Watt Power Amplifier
Key Features and Performance
• • • • • • 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm
TGA1055-EPU
Primary Applications
• • • LMDS TriQuint Semiconductor amplifier | | |
| 4 | TGA1055-EPU | Ka Band 2 Watt Power Amplifier Advance Product Information
Ka Band 2 Watt Power Amplifier
Key Features and Performance
• • • • • • 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm
TGA1055-EPU
Primary Applications
• • • LMDS TriQuint Semiconductor amplifier | | |
| 5 | TGA1071-EPU | 36 - 40 GHz Power Amplifier Advance Product Information
36 - 40 GHz Power Amplifier
• • • • • •
TGA1071-EPU
0.25um pHEMT Technology 36-40 GHz Frequency Range 22 dBm Nominal Pout @ P1dB 15 dB Nominal Gain 5V, 120 mA Bias Chip Dimensions 3.4mm x 2.1mm
Key Features and Performance
Primary Applications
• •
The TriQuint Semiconductor amplifier | | |
| 6 | TGA1073A-SCC | 26- 34 GHz Medium Power Amplifier Product Datasheet
August 15, 2000
26- 34 GHz Medium Power Amplifier
TGA1073A-SCC
Key Features and Performance
• • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA Chip Dimensions 1.95 mm x 1.12 mm
Primar TriQuint Semiconductor amplifier | | |
| 7 | TGA1073B-SCC | 27-32 GHz 0.7 Watt Power Amplifier Product Datasheet
January 17, 2005
27- 32 GHz 0.7 Watt Power Amplifier
TGA1073B-SCC
Key Features and Performance
• • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB (7V) -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA Chip Dimensions 3.12mm x TriQuint Semiconductor amplifier | | |
| 8 | TGA1073C-SCC | 36 - 40 GHz Power Amplifier Product Datasheet
August 15, 2000
36 - 40 GHz Power Amplifier
TGA1073C-SCC
Key Features and Performance
• • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm
Primary Applic TriQuint Semiconductor amplifier | | |
| 9 | TGA1073G-SCC | 19 - 27 GHz Medium Power Amplifier Product Datasheet
August 15, 2000
19 - 27 GHz Medium Power Amplifier
TGA1073G-SCC
Key Features and Performance
• • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm
Primary Applications
The TriQuint TGA1073G TriQuint Semiconductor amplifier | |
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