| P/N |
Descripción |
Fabr. |
PDF |
|
TC58FVT321 |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVT321, B321FT, XB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32-MBIT (4M × 8 BITS , 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION
The TC58FVT321, B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321, B321 features commands for Read, Program an
|
 |
 |
|
TC58FVT321XB |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVT321, B321FT, XB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32-MBIT (4M × 8 BITS , 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION
The TC58FVT321, B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321, B321 features commands for Read, Program an
|
|
|
|
TC58FVT321XB-70 |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVT321, B321FT, XB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32-MBIT (4M × 8 BITS , 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION
The TC58FVT321, B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321, B321 features commands for Read, Program an
|
|
|
