Datasheet TC1101 Equivalent ( PDF )

TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES Low Noise Figure: NF = 0.5 dB Typical at 12 GH- High Associated Gain: Ga = 12 dB Typical at 12 GH- High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GH- Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 m, Wg = 160 m All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION Th