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Datasheet SIC781CD Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SiC781CD | VRPower Integrated Power Stage www.vishay.com
SiC781CD
Vishay Siliconix
50 A, VRPower® Integrated Power Stage
DESCRIPTION
The SiC781 is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. Packaged in Vishay’s proprietary ML | Vishay | data |
SiC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SIC02A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC02A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
2 | SIC02A065T | SILICON CARBIDE SCHOTTKY DIODE SiC02A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
3 | SIC02A120S | SILICON CARBIDE SCHOTTKY DIODE SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
Voltage 1200 V Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mol Pan Jit International diode | | |
4 | SIC04A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
5 | SIC04A065NS | SILICON CARBIDE SCHOTTKY DIODE SiC04A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | | |
6 | SIC04A065T | SILICON CARBIDE SCHOTTKY DIODE SiC04A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: Mo Pan Jit International diode | | |
7 | SiC06A065ND | SILICON CARBIDE SCHOTTKY DIODE SiC06A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
6A
Features
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery
Mechanical Data
Case: M Pan Jit International diode | |
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Número de pieza | Descripción | Fabricantes | |
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