Datasheet SI1034CX Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI1034CX	Dual N-Channel 20 V (D-S) MOSFET Si1034CX Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 0.75 Qg (Typ.) • • • • TrenchFET® Power MOSFET 100 % Rg Tested Gate-Sou	Vishay

SI103 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI1039X	P-Channel 1.8-V (G-S) MOSFET SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range •	Vishay Siliconix
SI1036X	Dual N-Channel 30V (D-S) MOSFET www.vishay.com Dual N-Channel 30 V (D-S) MOSFET Si1036X Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.540 at VGS = 4.5 V 0.600 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 Qg (TYP.) 0.72 nC SC-89 Dual (6 leads) S2 G2 4	Vishay
SI1032X	N-Channel 20-V (D-S) MOSFET	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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