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Datasheet SVF4N60F Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SVF4N60F600V N-CHANNEL MOSFET

SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved gua
SILAN MICROELECTRONICS
SILAN MICROELECTRONICS
mosfet
2SVF4N60FG600V N-CHANNEL MOSFET

SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved gua
SILAN MICROELECTRONICS
SILAN MICROELECTRONICS
mosfet


SVF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1SVF10N60F600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60F pdf
2SVF10N60FG600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60FG pdf
3SVF10N60K600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60K pdf
4SVF10N60S600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60S pdf
5SVF10N60STR600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60STR pdf
6SVF10N60T600V N-CHANNEL MOSFET

SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N60T pdf
7SVF10N65F650V N-CHANNEL MOSFET

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have
Silan Microelectronics
Silan Microelectronics
datasheet SVF10N65F pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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