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Datasheet SVD50N06M Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SVD50N06M | MOSFET, Transistor 士兰微电子
SVD50N06T/D/M/MJ 说明书
50A、60V N沟道增强型场效应管
描述
SVD50N06T/D/M/MJ N 沟道增强型高压功率 MOS 场效应 晶体管采用士兰微电子新型平面低压 VDMOS 工艺技术制造。先 进的工艺及条状的原胞设计结构使得该产品具有较� | Silan Microelectronics | mosfet |
2 | SVD50N06MJ | MOSFET, Transistor SVD50N06T/D/MJ_Datasheet
50A, 60V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been espe | Silan Microelectronics | mosfet |
SVD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SVD101 | X Band VCO / PLO Ordering number : EN5766
Hyperabrupt Junction Type GaAs Varactor Diode
SVD101
X Band VCO, PLO
Features
• High Q. • High capacitance ratio.
Package Dimensions
unit: mm 1274
[SVD101]
1 : Cathode 2 : Anode
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Peak Reverse Voltage Aver Sanyo Semicon Device data | | |
2 | SVD102 | X Band VCO / PLO Ordering number : EN5767
Hyperabrupt Junction Type GaAs Varactor Diode
SVD102
X Band VCO, PLO
Features
• High Q. • High capacitance ratio.
Package Dimensions
unit: mm 1274
[SVD102]
1 : Cathode 2 : Anode
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Peak Reverse Voltage Aver Sanyo Semicon Device data | | |
3 | SVD10N60F | 600V N-CHANNEL MOSFET SVD10N60T/F_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal hav Silan Microelectronics mosfet | | |
4 | SVD10N60T | 600V N-CHANNEL MOSFET SVD10N60T/F_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal hav Silan Microelectronics mosfet | | |
5 | SVD10N65F | 650V N-CHANNEL MOSFET SVD10N65T/F(G)_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring termi Silan Microelectronics mosfet | | |
6 | SVD10N65FG | 650V N-CHANNEL MOSFET SVD10N65T/F(G)_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring termi Silan Microelectronics mosfet | | |
7 | SVD10N65T | 650V N-CHANNEL MOSFET SVD10N65T/F(G)_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring termi Silan Microelectronics mosfet | |
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