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Datasheet SUM70060E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SUM70060E | N-Channel MOSFET www.vishay.com
SUM70060E
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.0056 at VGS = 10 V 100
0.0062 at VGS = 7.5 V
ID (A) 131 129
Qg (TYP.) 53.5 nC
TO-263
Top View
S D G
Ordering Information: SUM70060E-GE3 (lead (Pb)-free and halogen-free) |  Vishay | mosfet |
SUM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | SUM09MN20-270 | N-Channel 200-V (D-S) 175C MOSFET SUM09N20-270
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
200
rDS(on) (W)
0.270 @ VGS = 10 V 0.300 @ VGS = 6 V
ID (A)
9 8.5
D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package
D
TO-263
G
G
D S |  Vishay Siliconix |  |
| 2 | SUM09N20-270 | N-Channel MOSFET SPICE Device Model SUM09N20-270 Vishay Siliconix N-Channel 200-V (D-S), 175°C MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model t | Vishay | |
| 3 | SUM10250E | N-Channel MOSFET www.vishay.com
SUM10250E
Vishay Siliconix
N-Channel 250 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) 250
RDS(on) () MAX. 0.031 at VGS = 10 V 0.032 at VGS = 7.5 V
ID (A) 63.5 62.5
Qg (TYP.) 57.6 nC
TO-263
Top View
S D G
Ordering Information: SUM10250E-GE3 (lead (Pb)-free and haloge | Vishay | |
| 4 | SUM110N02-03P | N-Channel 20-V (D-S) 175 C MOSFET SUM110N02-03P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
20
FEATURES
rDS(on) (W) ID (A)a
110a 110a
0.0032 @ VGS = 10 V 0.0052 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier
APP | Vishay Siliconix | |
| 5 | SUM110N03-03 | N-Channel 30-V (D-S) 175C MOSFET SUM110N03-03
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
FEATURES
rDS(on) (W) ID (A)a
110a
0.0025 @ VGS = 10 V
D D D D
D
TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
APPLICATIONS
D A | Vishay Siliconix | |
| 6 | SUM110N03-03P | N-Channel 30-V (D-S) 175C MOSFET SPICE Device Model SUM110N03-03P
Vishay Siliconix
N-Channel 30-V (D-S), 175°C MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model | Vishay Siliconix | |
| 7 | SUM110N04-03 | N-Channel 40-V (D-S) 200C MOSFET SUM110N04-03
Vishay Siliconix
N-Channel 40-V (D-S) 200_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.0028 @ VGS = 10 V
ID (A)
110 a
D TrenchFETr Power MOSFET D 200_C Junction Temperature D New Package with Low Thermal Resistance
APPLICATIONS
D Automotive - ABS - 12-V EPS - Mot | Vishay Siliconix | |
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