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Datasheet STW16NB60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STW16NB60   N-channel Power MOSFET

STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh™ MOSFET TYPE STW16NB60 s TYPICAL s s s s VDSS 600V RDS(on) < 0.35 Ω ID 16 A RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 DESCRI
 STMicroelectronics
STMicroelectronics		 datasheet STW16NB60 pdf

STW16N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STW16NM50N

N-channel Power MOSFET

STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 �
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
STW16NK60Z

N-CHANNEL MOSFET

STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.42 Ω < 0.42 Ω < 0.42 Ω ID 14 A 14 A 14 A Pw 190 W 190
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STW16NA40

N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS

® STW16NA40 STH16NA40FI N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW16NA40 STH16NA40FI s s s s s V DSS 400 V 400V R DS(on) < 0.3 Ω < 0.3 Ω ID 16 A 10 A TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% A
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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