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Datasheet STW12NA50 Equivalent ( PDF )

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1 STW12NA50   N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW12NA50 s s s s s s s V DSS 500 V R DS( on) < 0.6 Ω ID 11.6 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPAC
 ST Microelectronics
ST Microelectronics		 datasheet STW12NA50 pdf

STW12N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STW12NK90Z

N-CHANNEL Power MOSFET

STW12NK90Z N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW12NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.88Ω ID 11A pW 230W Extremely high dv/dt capability 100% avalanche tested Gate charge
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STW12N150K5

N-channel Power MOSFET

STW12N150K5 N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W  Industry’s low
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
STW12NK95Z

N-channel Power MOSFET

STW11NK100Z STW12NK95Z N-channel 950V - 0.69Ω - 10A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features Type VDSS RDS(on) (@Tjmax) 950 V < 0.90Ω ID 10 A PW 230W STW12NK95Z ■ ■ ■ Gate charge minimized 100% avalanche tested Extrem
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken		 PDF


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