Datasheet STT3490N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STT3490N	N-Channel Enhancement Mode Mos.FET STT3490N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, RDS(ON) 700 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free KEY FEATURES    TSOP-6 A E 6 5 4 Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.	SeCoS

STT34 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STT3434	N-Channel Enhancement Mode Mos.FET STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3434 uses advanced trench technology to provide excellent on-resistance and low	SeCoS
STT3423P	P-Channel Enhancement Mode Mos.FET STT3423P Elektronische Bauelemente -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provi	SeCoS
STT3457P	P-Channel Enhancement Mode Mos.FET STT3457P Elektronische Bauelemente -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide	SeCoS

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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