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Datasheet STS2622 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | STS2622 | Dual N-Channel Enhancement Mode Field Effect Transistor S T S 2622
S amHop Microelectronics C orp. F eb,25 2005 V er1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
2.5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
80 @ V G S = 4.5V 110 @ V G S = 2.5V
R ugged |
 SamHop Microelectronics |
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| 1 | STS2622A | Dual N-Channel Enhancement Mode Field Effect Transistor Green Product
STS2622A
Ver 2.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
20V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
3.4A
R DS(ON) (m Ω) Max
60 @ VGS=4.5V 90 @ V |
SamHop Microelectronics |
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