Datasheet STN4972S8RG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STN4972S8RG	Dual N Channel Enhancement Mode MOSFET STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery po	Stanson Technology

STN4972S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STN4972S8TG	Dual N Channel Enhancement Mode MOSFET STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the po	Stanson Technology
STN4972S8RG	Dual N Channel Enhancement Mode MOSFET STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the po	Stanson Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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