Datasheet STN1NC60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STN1NC60	N-CHANNEL MOSFET N-CHANNEL 600V - 12Ω - 0.3A - SOT-223 PowerMesh™II MOSFET TYPE STN1NC60 s s s s s STN1NC60 VDSS 600 V RDS(on) <15Ω ID 0.3 A TYPICAL RDS(on) = 12Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 2 1 SOT-223 2	STMicroelectronics

STN1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STN1NK60Z	N-CHANNEL MOSFET STN1NK60Z, STQ1NK60ZR N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™ Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features 4 3 2 1 SOT-223 TO-92 (Ammopak) Figure 1. Internal schematic diagram D(2,4) G(1) S(3) AM01476v1 Order codes	STMicroelectronics
STN1N20	N-CHANNEL MOSFET ® STN1N20 N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223 POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STN1N20 s s s V DSS 200 V R DS(on) < 1.5 Ω I D CONT 1 A s s s TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERE	STMicroelectronics
STN1NF10	N-CHANNEL MOSFET N-CHANNEL 100V - 0.7 Ω - 1A SOT-223 STripFET™ II POWER MOSFET TYPE STN1NF10 s s STN1NF10 VDSS 100 V RDS(on) < 0.8 Ω ID 1A TYPICAL RDS(on) = 0.7 Ω EXCEPTIONAL dv/dt CAPABILITY 2 DESCRIPTION This Power MOSFET is the latest development of STMicroe	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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