Datasheet STGWA40N120KD Equivalent ( PDF ) - Igbt

STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features - - - - - Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling diode 1 2 3 Applications - TO-247 Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process res

S T G 2017 S amHop Microelectronics C orp. May,18 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 28 @ V G S = 2.5V R ugged and reliab

Gr Pr STG2454 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 24V ID 7A R DS(ON) (m Ω) Max 17 @ VGS=4.0V 29 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD

S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( mW ) Max ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON ). 17 @ V G S = -4.5V 25 @ V G S = -2.5V R ugged and

STG3155 Low voltage 0.5Ω Max single SPDT switch with break-before-make feature Features - High speed: tPD = 1.5ns (Typ.) at VCC = 3.0V tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: ICC = 0.2 A (Max.) at TA = 85°C Low "ON" resistance: RON = 0.5Ω (TA = 25ºC) at VCC = 4.3V R

STG3157 Low voltage low on-resistance SPDT switch with break-before-make feature Features - High speed: tPD = 0.3 ns (max) at VCC = 4.5 V tPD = 0.8 ns (max) at VCC = 3.0 V tPD = 1.2 ns (max) at VCC = 2.3 V - Ultra low power dissipation: ICC = 1 A (max) at TA = 85 °C - Low on-resistance; at VI

STG3159 Low voltage 1Ω max single SPDT switch with break-before-make feature Features - High speed: tPD = 1.5ns (Typ.) at VCC = 3.0V tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: ICC = 0.2 A (Max.) at TA = 85°C Low "ON" resistance: RON = 1.0Ω (TA = 25ºC) at VCC = 4.3V R

STG3220 Low voltage high bandwidth dual SPDT switch Features - - Ultra low power dissipation: ICC = 1 μA (max.) at TA = 85 °C Low "ON" resistance: RON = 4.8 Ω (TA = 25 ºC) at VCC = 4.3 V RON = 5.9 Ω (TA = 25 ºC) at VCC = 3.0 V Wide operating voltage range: VCC (opr) = 1.65 V to 4.3 V 4.