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Datasheet STGP3NB60H Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | STGP3NB60H | N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT ®
STGP3NB60H
N-CHANNEL 3A - 600V TO-220 PowerMESH™ IGBT
T YPE STGP3NB60H
s
V CES 600 V
V CE(sat) < 2.8 V
IC 3 A
s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT |  ST Microelectronics | igbt |
| 2 | STGP3NB60HD | N-CHANNEL PowerMESH IGBT ®
STGP3NB60HD STGP3NB60HDFP
N-CHANNEL 3A - 600V TO-220/FP PowerMESH™ IGBT
TYPE STGP3NB60HD STGP3NB60HDFP
s
V CES 600 V 600 V
V CE(sat) < 2.8 V < 2.8 V
IC 3 A 3 A
s s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH | ST Microelectronics | igbt |
| 3 | STGP3NB60HDFP | N-CHANNEL PowerMESH IGBT STGP3NB60HD ® STGP3NB60HDFP
N-CHANNEL 3A - 600V TO-220/FP PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGP3NB60HD STGP3NB60HDFP
600 V < 2.8 V 600 V < 2.8 V
3A 3A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (Vcesat) s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY s VERY HIGH FREQUE |  STMicroelectronics | igbt |
STG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | STG2017 | Dual N-Channel E nhancement Mode Field Effect Transistor
S T G 2017
S amHop Microelectronics C orp. May,18 2005
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
7A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
20 @ V G S = 4.5V 28 @ V G S = 2.5V
 SamHop Microelectronics transistor | | |
| 2 | STG2454 | Dual N-Channel Enhancement Mode Field Effect Transistor Gr Pr
STG2454
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
24V
ID
7A
R DS(ON) (m Ω) Max
17 @ VGS=4.0V 29 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD SamHop Microelectronics transistor | | |
| 3 | STG2507 | Dual P-Channel E nhancement Mode Field Effect Transistor
S T G 2507
S amHop Microelectronics C orp. May,10 2005
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( mW ) Max
ID
6.2A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
17 @ V G S = -4.5V 25 @ V G S = SamHop Microelectronics transistor | | |
| 4 | STG3155 | Low voltage 0.5 Ohm Max single SPDT switch STG3155
Low voltage 0.5Ω Max single SPDT switch with break-before-make feature
Features
■
High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 0.5Ω (TA = 25ºC) a ST Microelectronics data | | |
| 5 | STG3157 | Low voltage low on-resistance SPDT switch STG3157
Low voltage low on-resistance SPDT switch with break-before-make feature
Features
■ High speed: – tPD = 0.3 ns (max) at VCC = 4.5 V – tPD = 0.8 ns (max) at VCC = 3.0 V – tPD = 1.2 ns (max) at VCC = 2.3 V
■ Ultra low power dissipation: – ICC = 1 µA (max) at TA = 85 °C
■ Low o ST Microelectronics data | | |
| 6 | STG3159 | single SPDT switch
STG3159
Low voltage 1Ω max single SPDT switch with break-before-make feature
Features
■
High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 1. STMicroelectronics data | | |
| 7 | STG3220 | Low voltage high bandwidth dual SPDT switch
STG3220
Low voltage high bandwidth dual SPDT switch
Features
■ ■
Ultra low power dissipation: – ICC = 1 μA (max.) at TA = 85 °C Low "ON" resistance: – RON = 4.8 Ω (TA = 25 ºC) at VCC = 4.3 V – RON = 5.9 Ω (TA = 25 ºC) at VCC = 3.0 V Wide operating voltage range: ST Microelectronics data | |
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