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Datasheet SSP4N80A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SSP4N80A | Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.400 Ω (Typ.)
1 2 3
SSP4N80A
BVDSS = 800 V RDS(o |  Fairchild Semiconductor | mosfet |
| 2 | SSP4N80AS | Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.)
SSP4N80AS
BVDSS = 800 V RDS(on) = | Fairchild Semiconductor | mosfet |
SSP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SSP-T | Surface Mount Quartz Crystal Units
SSP-T Series (SSP-T5) Surface Mount Quartz Crystal Units for Low Frequencies
FEATURES
New Product
• This type with height 2.1mm Max. • Small mounting area of 23.4mm2. • SMD type suitable for automatic & high density surface mounting. • Plastic mold package containing h  ETC data | | |
| 2 | SSP-T5 | Surface Mount Quartz Crystal Units
SSP-T Series (SSP-T5) Surface Mount Quartz Crystal Units for Low Frequencies
FEATURES
New Product
• This type with height 2.1mm Max. • Small mounting area of 23.4mm2. • SMD type suitable for automatic & high density surface mounting. • Plastic mold package containing h ETC data | | |
| 3 | SSP100 | (SSP80 / SSP100) Surround Sound Processor Manual Owner’s Manual
SSP100
Surround Sound Processor
SSP80
Surround Sound Processor
www.halcro.com
Free Datasheet http://www.datasheet4u.net/
1
Contents
Introduction ................................................3 Important Safety Information...................5
Symbols .........................  HALCRO data | | |
| 4 | SSP10N60A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.)
SSP10N60A
BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A
TO-2 Fairchild Semiconductor mosfet | | |
| 5 | SSP10N60B | 600V N-Channel MOSFET
SSP10N60B/SSS10N60B
SSP10N60B/SSS10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to mini Fairchild Semiconductor mosfet | | |
| 6 | SSP11N60C2 | Power Transistor
Final data
SPP11N60C2, SPB11N60C2 SPA11N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
P-TO220-3-31
Product Summary VDS  infineon transistor | | |
| 7 | SSP1601 | DSP Samsung Electronics data | |
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| Número de pieza | Descripción | Fabricantes | |
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