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Datasheet SSP4N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SSP4N60(SSP4N55 / SSP4N60) N-Channel Power MOSFET

Samsung Electronics
Samsung Electronics
mosfet
2SSP4N60ASAdvanced Power MOFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A T
Fairchild Semiconductor
Fairchild Semiconductor
data
3SSP4N60ASAdvanced Power MOFET

Samsung Electronics
Samsung Electronics
data
4SSP4N60B600V N-Channel MOSFET

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
Fairchild Semiconductor
Fairchild Semiconductor
mosfet


SSP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1SSP-TSurface Mount Quartz Crystal Units

SSP-T Series (SSP-T5) Surface Mount Quartz Crystal Units for Low Frequencies FEATURES New Product • This type with height 2.1mm Max. • Small mounting area of 23.4mm2. • SMD type suitable for automatic & high density surface mounting. • Plastic mold package containing h
ETC
ETC
datasheet SSP-T pdf
2SSP-T5Surface Mount Quartz Crystal Units

SSP-T Series (SSP-T5) Surface Mount Quartz Crystal Units for Low Frequencies FEATURES New Product • This type with height 2.1mm Max. • Small mounting area of 23.4mm2. • SMD type suitable for automatic & high density surface mounting. • Plastic mold package containing h
ETC
ETC
datasheet SSP-T5 pdf
3SSP100(SSP80 / SSP100) Surround Sound Processor Manual

Owner’s Manual SSP100 Surround Sound Processor SSP80 Surround Sound Processor www.halcro.com Free Datasheet http://www.datasheet4u.net/ 1 Contents Introduction ................................................3 Important Safety Information...................5 Symbols .........................
HALCRO
HALCRO
datasheet SSP100 pdf
4SSP10N60AAdvanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-2
Fairchild Semiconductor
Fairchild Semiconductor
datasheet SSP10N60A pdf
5SSP10N60B600V N-Channel MOSFET

SSP10N60B/SSS10N60B SSP10N60B/SSS10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to mini
Fairchild Semiconductor
Fairchild Semiconductor
datasheet SSP10N60B pdf
6SSP11N60C2Power Transistor

Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS
infineon
infineon
datasheet SSP11N60C2 pdf
7SSP1601DSP

Samsung Electronics
Samsung Electronics
datasheet SSP1601 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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