|
|
Datasheet SQD400BA60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SQD400BA60 | TRANSISTOR MODULE TRANSISTOR MODULE
Hi-
SQD400BA60
UL;E76102 M SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is electrically isolated fro |  ETC | transistor |
SQD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SQD-605 | MULTI WAY LED BACKLIGHT CONVERTER SPECIFICATIONS
SQD-605 VER:3.2 Page 1 of 11
PRODUCT SPECIFICATION 产品规格书
PRODUCT/产品名称:
MULTI WAY LED BACKLIGHT CONVERTER 多路 LED 背光转换器
SAQCN P/N / 型号 CUSTOMER / 客户 : CUSTOMER P/ N 客户物料编码 DATE /日期 :
: SQD-605 VER3.2 For MT185GW01 /
PD F w C
 SAQCN led | | |
| 2 | SQD07N25-350H | Automotive N-Channel MOSFET www.vishay.com
SQD07N25-350H
Vishay Siliconix
Automotive N-Channel 250 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package
TO-252
250 0.350
7 Single TO-252
D
FEATURES • TrenchFET® power MOSFET
• Package with low thermal resistance • AEC-  Vishay mosfet | | |
| 3 | SQD100N03-3M2L | Automotive N-Channel MOSFET www.vishay.com
SQD100N03-3m2L
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TO-252
30 0.0032 0.0039
100 Single
D
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tes Vishay mosfet | | |
| 4 | SQD100N03-3M4 | Automotive N-Channel MOSFET www.vishay.com
SQD100N03-3m4
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration
TO-252
30 0.0034
100 Single
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Materia Vishay mosfet | | |
| 5 | SQD100N04-3m6 | Automotive N-Channel MOSFET www.vishay.com
SQD100N04-3m6
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration
TO-252
40 0.0036
100 Single
FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Te Vishay mosfet | | |
| 6 | SQD100N04-3m6L | Automotive N-Channel MOSFET www.vishay.com
SQD100N04-3m6L
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
Package
40 0.0036 0.0042
100 Single TO-252
FEATURES • TrenchFET® power MOSFET
• Package with low Vishay mosfet | | |
| 7 | SQD10N30-330H | Automotive N-Channel MOSFET www.vishay.com
SQD10N30-330H
Vishay Siliconix
Automotive N-Channel 300 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration
TO-252
300 0.330
10 Single
D
FEATURES • TrenchFET® power MOSFET
• Package with low thermal resistance • AEC-Q101 qualified Vishay mosfet | |
| Esta página es del resultado de búsqueda del SQD400BA60. Si pulsa el resultado de búsqueda de SQD400BA60 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |