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Datasheet SPP3407 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SPP3407P-Channel Enhancement Mode MOSFET

SPP3407 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
SYNC POWER
SYNC POWER
mosfet
2SPP3407BP-Channel Enhancement Mode MOSFET

SPP3407B P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar
SYNC POWER
SYNC POWER
mosfet
3SPP3407DP-Channel Enhancement Mode MOSFET

SPP3407D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar
SYNC POWER
SYNC POWER
mosfet
4SPP3407DS23RGP-Channel Enhancement Mode MOSFET

SPP3407D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar
SYNC POWER
SYNC POWER
mosfet
5SPP3407DS23RGBP-Channel Enhancement Mode MOSFET

SPP3407D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar
SYNC POWER
SYNC POWER
mosfet


SPP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1SPP-ID975Service Manual

w w h Ver 1.0 1999. 11 S a t a D . w SERVICE ee MANUAL U 4 t SPP-ID975/ID976 m o .c US Model SPP-ID975 Canadian Model SPP-ID976 Photo: SPP-ID975 SPECIFICATIONS General Frequency band (SPP-ID975) 902 – 928 MHz Frequency band (SPP-ID976) 923.1 – 927.75 MHz Base phone : 18 µW Handset : 73
Sony
Sony
datasheet SPP-ID975 pdf
2SPP-ID975Cordless Telephone

Sony
Sony
datasheet SPP-ID975 pdf
3SPP-ID976Service Manual

w w h Ver 1.0 1999. 11 S a t a D . w SERVICE ee MANUAL U 4 t SPP-ID975/ID976 m o .c US Model SPP-ID975 Canadian Model SPP-ID976 Photo: SPP-ID975 SPECIFICATIONS General Frequency band (SPP-ID975) 902 – 928 MHz Frequency band (SPP-ID976) 923.1 – 927.75 MHz Base phone : 18 µW Handset : 73
Sony
Sony
datasheet SPP-ID976 pdf
4SPP02N60C3Cool MOS Power Transistor

Final data SPP02N60C3 SPB02N60C3 VDS @ Tjmax RDS(on) ID P-TO263-3-2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances 650 3 1.8
Infineon Technologies
Infineon Technologies
datasheet SPP02N60C3 pdf
5SPP02N60S5Cool MOS Power Transistor

SPP02N60S5 SPB02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID
Infineon Technologies
Infineon Technologies
datasheet SPP02N60S5 pdf
6SPP02N80C3Cool MOS Power Transistor

Final data SPP02N80C3 SPA02N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1
Infineon Technologies
Infineon Technologies
datasheet SPP02N80C3 pdf
7SPP03N60C3Cool MOS Power Transistor

Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved tr
Infineon Technologies
Infineon Technologies
datasheet SPP03N60C3 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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