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Datasheet SPN8822A Equivalent ( PDF )

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1 SPN8822A   Dual N-Channel Enhancement Mode MOSFET

SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize o
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SYNC POWER
datasheet SPN8822A pdf

SPN88 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SPN8878BT252RGB

N-Channel Enhancement Mode MOSFET

SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the overall efficiency
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SYNC POWER
datasheet pdf - SYNC POWER
SPN8878BT251TGB

N-Channel Enhancement Mode MOSFET

SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the overall efficiency
SYNC POWER
SYNC POWER
datasheet pdf - SYNC POWER
SPN8882

N-Channel Enhancement Mode MOSFET

SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall efficiency of
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SYNC POWER
datasheet pdf - SYNC POWER


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SPS122

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