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Descripción |
Fabr. |
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SPN7002 |
N-Channel Enhancement Mode MOSFET
SPN7002
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN7002 is the N-Cha nnel enhancement mode field effect t ransistors ar e produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Th ey can be used in most ap plications requiring u p to 300mA DC and can deliver pulsed
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SPN7002D |
Dual N-Channel Enhancement Mode MOSFET
SPN7002D
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN7002D is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver
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SPN7002K |
N-Channel Enhancement Mode MOSFET
SPN7002K
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed cur
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SPN7002KS23RGB |
N-Channel Enhancement Mode MOSFET
SPN7002K
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed cur
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SPN7002L |
N-Channel Enhancement Mode MOSFET
SPN7002L
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN7002L is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed cur
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