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Datasheet SPN2318 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SPN2318N-Channel Enhancement Mode MOSFET

SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
SYNC POWER
SYNC POWER
mosfet


SPN Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1SPN01N60C3Cool MOS Power Transistor

Rev. 2.1 SPN01N60C3 VDS @ Tjmax RDS(on) ID 650 6 0.3 SOT-223 4 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance V Ω A 3 2 1 VPS05163 Type Pac
Infineon
Infineon
datasheet SPN01N60C3 pdf
2SPN01N60S5Cool MOS Power-Transistor

Preliminary data SPN01N60S5 Cool MOS Power-Transistor New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Optimized capacitances Improved noise immunity C O OLMO S Power Semiconductors Product Summary VDS @ Tjmax RDS(on) ID SOT-223 ì 650 6
Infineon Technologies
Infineon Technologies
datasheet SPN01N60S5 pdf
3SPN02N60C3Power Transistor

Rev. 2.1 SPN02N60C3 VDS @ Tjmax RDS(on) ID 650 3 0.4 SOT223 4 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra V Ω A low effective capacitances 3 2 1 VPS05163 Type SPN02N60C3 Pa
Infineon Technologies
Infineon Technologies
datasheet SPN02N60C3 pdf
4SPN02N60S5Power Transistor

SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances • Improved transconductance 2 1 3 VPS05163 Typ
Infineon Technologies
Infineon Technologies
datasheet SPN02N60S5 pdf
5SPN03N60C3Cool MOS Power Transistor

Rev. 2.0 SPN03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 0.7 SOT-223 4 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances V Ω A 3 2 1 VPS05163 Type Package Ordering Code SPN03N6
Infineon Technologies
Infineon Technologies
datasheet SPN03N60C3 pdf
6SPN03N60S5Cool MOS Power Transistor

SPN03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 2 1 VPS05163 VDS RDS(on) ID 600 1.4 0.7 SOT-223 4 V Ω A 3 Type SPN03N60S5 Package
Infineon Technologies
Infineon Technologies
datasheet SPN03N60S5 pdf
7SPN04N60C2Cool MOS Power Transistor

Final data SPN04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 Product Summary VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances •
Infineon
Infineon
datasheet SPN04N60C2 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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